Title of article :
Cryogenic semiconductor high-intensity radiation monitors
Author/Authors :
Palmieri، نويسنده , , V.G. and Bell، نويسنده , , W.H. and Borer، نويسنده , , K. and Casagrande، نويسنده , , L. Dalla Via، نويسنده , , C.Da and Devine، نويسنده , , S.R.H and Dezillie، نويسنده , , B. and Esposito، نويسنده , , A. and Granata، نويسنده , , V. and Hauler، نويسنده , , F. and Jungermann، نويسنده , , L. and Li، نويسنده , , Z. and Lourenço، نويسنده , , C. and Niinikoski، نويسنده , , T.O. and Shea، نويسنده , , V.O’ and Ruggier، نويسنده ,
Pages :
4
From page :
97
To page :
100
Abstract :
This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux.
Keywords :
cryogenic , Semiconductor , detector , Lazarus effect
Journal title :
Astroparticle Physics
Record number :
2021083
Link To Document :
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