Author/Authors :
Hنrkِnen، نويسنده , , J and Tuominen، نويسنده , , E and Tuovinen، نويسنده , , E and Lassila-Perini، نويسنده , , K and Nummela، نويسنده , , S and Nysten، نويسنده , , J and Heikkilن، نويسنده , , P and Ovchinnikov، نويسنده , , V and Yli-Koski، نويسنده , , M and Palmu، نويسنده , , L. and Kallijنrvi، نويسنده , , S and Alanko، نويسنده , , T and Laitinen، نويسنده , , P and Pirojenko، نويسنده , , A and Riihimنki، نويسنده , , Sergey Tiourine، نويسنده ,
Abstract :
Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
