Author/Authors :
Litovchenko، نويسنده , , P.G. and Groza، نويسنده , , A.A. and Varnina، نويسنده , , V.I. and Starchik، نويسنده , , M.I. and Khivrich، نويسنده , , V.I. and Shmatko، نويسنده , , G.G. and Polivzev، نويسنده , , L.A. and Pinkovska، نويسنده , , M.B. and Bisello، نويسنده , , D. and Candelori، نويسنده , , A. S. Litovchenko، نويسنده , , A.P. and Wyss، نويسنده , , Christopher J. and Wahl، نويسنده , , W.، نويسنده ,
Abstract :
In silicon material with oxygen concentration in the range (4–9)×1017 cm−3, grown by the CZ method and irradiated by reactor neutrons, the interstitial oxygen mainly participates in A-center (V+O) creation. A-center concentration is linearly dependent on neutron fluence up to Φ=1018 n/cm2, value at which saturation occurs caused not by the exhaustion of dissolved oxygen but rather by vacancy-interstitial atom annihilation competitive mechanisms. A-center annealing (T>300°C) does not lead to the full restoring of interstitial oxygen concentration. Repeating neutron irradiation and annealing causes a decrease of oxygen complex activity and the silicon behaves as a low-oxygen material.
