Author/Authors :
Hنrkِnen، نويسنده , , Timo J. and Tuominen، نويسنده , , E. and Tuovinen، نويسنده , , E. and Mehtنlن، نويسنده , , P. and Lassila-Perini، نويسنده , , K. N. Ovchinnikov، نويسنده , , V. and Heikkilن، نويسنده , , P. and Yli-Koski، نويسنده , , M. and Palmu، نويسنده , , L. and Kallijنrvi، نويسنده , , S. and Nikkilن، نويسنده , , H. and Anttila، نويسنده , , O. and Niinikoski، نويسنده , , T. and Eremin، نويسنده , , V. and Ivanov، نويسنده , , A. ، نويسنده ,
Abstract :
We have processed large-area strip sensors on silicon wafers grown by the magnetic Czochralski (MCZ) method. The n-type MCZ silicon wafers manufactured by Okmetic Oyj have nominal resistivity of 900 Ω cm and oxygen concentration of less than 10 ppma. The Photoconductive Decay (PCD) measurements, current–voltage measurements and capacitance–voltage measurements were made to characterise the samples. The leakage current of 3 μA at 900 V bias voltage was measured on the 32.5 cm2 detector. Detector depletion took place at about 420 V. According to PCD measurements, process induced contamination was effectively bound and neutralised by the oxygen present in Czochralski silicon. During the sample processing, the silicon resistivity increased in spite of the lack of specific donor-killing heat treatment.
