Author/Authors :
Batignani، نويسنده , , G. and Bisogni، نويسنده , , M.G and Boscardin، نويسنده , , M. and Bosisio، نويسنده , , L. and Dalla Betta، نويسنده , , G.F. and Del Guerra، نويسنده , , A. and Dittongo، نويسنده , , S. and Forti، نويسنده , , F. and Giorgi، نويسنده , , M. and Han، نويسنده , , D.J. and Linsalata، نويسنده , , S. and Marchiori، نويسنده , , G. and Piemonte، نويسنده , , C. and Rachevskaia، نويسنده , , I. and Ronchin، نويسنده , , S.، نويسنده ,
Abstract :
NPN phototransistors have been fabricated on high-purity silicon substrate. The devices have been produced by ITC-IRST in the framework of a National Research Project funded by the Italian Education, University and Research Ministry (MIUR). The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 300 μm thick silicon bulk. Several devices have been investigated. Results with 22 keV X-ray from a 109Cd-radioactive source and visible light irradiation are presented.
