Oxidation study of Sb+ implanted Si(1 0 0) and Si(1 1 1) targets. Use of high-resolution RBS technique

High-resolution Rutherford backscattering spectroscopy (RBS) was used to study the oxidation phenomenon of antimony-implanted silicon targets. The study was carried out with respect to antimony dose and silicon target orientation. The behavior of antimony ions before and after silicon oxidation was also investigated. Prior to the oxidation process, the Si(1 0 0) and Si(1 1 1) targets were implanted to 5×1014 or 5×1015 Sb+cm−2 dose, at 60 keV energy. The dry oxidation of the silicon specimens, was performed under oxygen atmosphere at 900°C for 30 min. The analysis was carried out by means of RBS technique in both random and channeling modes. A beam of H+ particles was used for an energy of 0.3 MeV, with a detection resolution of 2 keV. shown that the oxidation phenomenon was more important on Si(1 1 1) targets than on Si(1 0 0). The SiO2 oxide layer increased with the rise in antimony ions dose. Besides, after annealing under oxygen atmosphere, a good surface damage recovery was obtained for all implanted samples. An important quantity of antimony was found to be shadowed for the case of Si(1 0 0) targets which were implanted with 5×1014 Sb+cm−2 dose. However, for the case of 5×1015 Sb+ cm−2 dose, no shadowing of antimony ions was observed.