Title of article :
Equal-double junctions in 24 GeV/c proton-irradiated MCZ n- and p-type Si detectors: A systematic transient current technique investigation
Author/Authors :
Li، نويسنده , , Z. and Chen، نويسنده , , W. and Eremin، نويسنده , , V. and Gul، نويسنده , , R. and Guo، نويسنده , , Y.H. and Harkonen، نويسنده , , J. and Luukka، نويسنده , , P. and Tuovinen، نويسنده , , E. and Verbitskaya، نويسنده , , E.، نويسنده ,
Pages :
10
From page :
539
To page :
548
Abstract :
We undertook systematic transient current technique (TCT) studies, measuring the shapes of electron- and hole-transient currents in three sets of samples irradiated by 24 GeV/c protons at fluences 1.6×1014–2.4×1015 p/cm2. We carried out these measurements after leaving the samples to anneal for 22–23 days at room temperature. The three sets comprised (1) magnetic Czochralski (MCZ) n-type Si detectors; (2) MCZ p-type Si detectors; and (3) float-zone (FZ) n-type Si detectors (control set). The control set showed no surprises. The space charge sign inversion (SCSI) had already occurred at the lowest fluence (1.6×1014 p/cm2), and the double junction/double peak effect was readily apparent, with the first junction, the minor one, near the p+ contact, which changes very little with bias voltages. It is superseded by the second junction near the n+ contact (negative space charge) at biases higher than the full-depletion voltage. For both MCZ n-type and p-type detectors, the double junction/double peak effect also was initiated at the lowest fluence, but the standard SCSI evident in FZ n-type detectors (wherein the negative space charge dominates the entire detector) was not seen in that fluence range. However, in these two groups, the double junction/peak effect persisted into subsequent higher fluences with almost equal junctions near the p+ and n+ contacts, regardless of bias voltages, which may be much larger than the full-depletion voltages. This new effect, termed the equal-double-junction effect, is unique for the 24 GeV/c proton-irradiated MCZ (n and p) Si detectors. It is evident by the almost identical shapes in TCT currents, before trapping corrections, for both electrons (red laser on the p+ contact) and holes (on the n+ contact), with the first peak always dominating a small second peak at any bias voltages. After trapping corrections, the heights of the two peaks are about the same, suggesting the existence of nearly equal-double junctions in the detector.
Keywords :
Radiation hardness , Si detectors , Equal-double peak (EDP) , SCSI , DJ , DP
Journal title :
Astroparticle Physics
Record number :
2023419
Link To Document :
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