Study of recombination characteristics in 2 MeV protons irradiated and annealed Si structures

Comparative study of the carrier recombination and generation lifetime as well as reverse recovery durations (RR), dependent on 2 MeV proton irradiation fluences in the range of 7×1012−7×1014 p/cm2 and on anneal regimes, has been performed in FZ silicon pin diodes and wafer structures. Recombination lifetimes from several μs to few ns have been measured by employing a microwave probed photoconductivity transient technique (MW-PC), while deep levels spectra, ascribed to emission lifetime variations, have been examined by exploiting capacitance deep level transient spectroscopy (C-DLTS). Variations of the six DLTS peaks are examined under isochronal anneals in the range of temperatures of 80–320 °C.