• Title of article

    3D silicon detectors—status and applications

  • Author/Authors

    DaVia، نويسنده , , C. and Hasi، نويسنده , , J. and Kenney، نويسنده , , C. and Kok، نويسنده , , A. and Parker، نويسنده , , S.، نويسنده ,

  • Pages
    4
  • From page
    122
  • To page
    125
  • Abstract
    3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed—3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown.
  • Keywords
    Active edge , Planar 3D , 3D detector
  • Journal title
    Astroparticle Physics
  • Record number

    2026561