Title of article
Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons
Author/Authors
Makarenko، نويسنده , , L.F. and Korshunov، نويسنده , , F.P. and Lastovski، نويسنده , , S.B. and Kazuchits، نويسنده , , N.M. and Rusetsky، نويسنده , , M.S. and Fretwurst، نويسنده , , E. and Lindstrِm، نويسنده , , G. H. Moll، نويسنده , , M. and Pintilie، نويسنده , , I. and Zamiatin، نويسنده , , N.I.، نويسنده ,
Pages
5
From page
77
To page
81
Abstract
The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard float zone silicon. The detectors were irradiated with 3.5 MeV electrons and annealed at temperatures of 50–350 °C. It has been found that preliminary hydrogenation at 300 °C leads to disappearance of divacancies and vacancy–oxygen complexes at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors.
Keywords
Silicon detectors , electron irradiation , Radiation damage , Hydrogen
Journal title
Astroparticle Physics
Record number
2026776
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