Author/Authors :
Litovchenko، نويسنده , , P. and Bisello، نويسنده , , D. and Litovchenko، نويسنده , , A. and Kanevskyj، نويسنده , , S. and Opilat، نويسنده , , V. and Pinkovska، نويسنده , , M. and Tartachnyk، نويسنده , , V. and Rando، نويسنده , , R. and Giubilato، نويسنده , , P. and Khomenkov، نويسنده , , V.، نويسنده ,
Abstract :
Electrical characteristics of red and green GaP light diodes irradiated by fast electrons and neutrons were studied. It has been found that S-type current–voltage curves, measured in current generator mode at low-temperature, show presence of fine structure. The mechanism of negative differential resistance formation and influence of radiation on current transport and relaxation mechanisms have been studied. Estimation of the effective cross-section for electron capture by recombination levels and its changes under irradiation were obtained from experimental data. Detailed study of radiation modification of GaP light diode parameters makes it possible to propose these devices as high sensitive sensors of gamma rays and electrons.
Keywords :
GAP , Light diodes , Negative Resistance , injection , traps , Cross-section , radiation , Relaxation , Disorder regions
