Semi-3D silicon detector and initial results of its performance

A novel p+–n+/n/n+ semi-3D structure configuration has been developed and it is expected to improve the radiation hardness of silicon sensors after space charge sign inversion (SCSI). A special configuration of semi-3D sensors facilitates depletion from both sides of the sensors after SCSI and reduces the depletion voltage by half or more. The reduction of depletion voltage will increase the ability of silicon detectors to operate in the presence of severe bulk radiation damage expected at high-intensity colliders. Semi-3D sensors can be manufactured using only single-sided, conventional planar processing. Electrical characterization of semi-3D test structures through I–V and C–V curves before and after irradiation is presented here.