Title of article
DEPFET—detectors: New developments
Author/Authors
Lutz، نويسنده , , G. and Andricek، نويسنده , , L. and Eckardt، نويسنده , , R. and Hنlker، نويسنده , , O. and Hermann، نويسنده , , S. and Lechner، نويسنده , , Marc P. and Richter، نويسنده , , R. and Schaller، نويسنده , , G. and Schopper، نويسنده , , F. and Soltau، نويسنده , , H. and Strüder، نويسنده , , L. and Treis، نويسنده , , J. and Wِlfl، نويسنده , , S. and Zhang، نويسنده , , C.، نويسنده ,
Pages
5
From page
311
To page
315
Abstract
The Depleted Field Effect Transistor (DEPFET) detector–amplifier structure forms the basis of a variety of detectors being developed at the MPI semiconductor laboratory. These detectors are foreseen to be used in astronomy and particle physics as well as other fields of science. The detector developments are described together with some intended applications. They comprise the X-ray astronomy missions XEUS and SIMBOL-X as well as the vertex detector of the planned International Linear Collider (ILC). All detectors are produced in the MPI semiconductor laboratory that has a complete silicon technology available.
Keywords
Silicon detector , DEPFET , Pixel detector , XEUS , Simbol-X
Journal title
Astroparticle Physics
Record number
2027703
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