Author/Authors :
Nakazawa، نويسنده , , Kazuhiro and Takeda، نويسنده , , Shin’ichiro and Tanaka، نويسنده , , Takaaki and Takahashi، نويسنده , , Tadayuki and Watanabe، نويسنده , , Shin and Fukazawa، نويسنده , , Yasushi and Sawamoto، نويسنده , , Naoyuki and Tajima، نويسنده , , Hiroyasu and Itoh، نويسنده , , Takeshi and Kokubun، نويسنده , , Motohide، نويسنده ,
Abstract :
Double-sided silicon strip detectors (DSSD) with an energy resolution of 1–2 keV full-width at half-maximum (FWHM) are attractive devices for future hard X-ray and soft γ-ray applications. For example, they are well suited as scatterer detectors for semiconductor Compton telescopes working in the sub-MeV to MeV band, as well as imaging spectrometers in the hard X-ray band. In this paper, the performance of newly developed 4-cm-wide DSSDs is presented.This DSSD has an active area of 38.4 mm times 38.4 mm, with a thickness of 300 μm. The stip pitch is 400 μm. The detector shows an average energy resolution of 1.5 keV (FWHM) for 59.5 keV γ-rays, operated at −20 °C with a bias of 100 V. A 22 keV hard X-ray image is also obtained with 400 μm resolution.
