Author/Authors :
Lundstedt، نويسنده , , C. and Harken، نويسنده , , A. and Day، نويسنده , , E. and Robertson، نويسنده , , B.W. and Adenwalla، نويسنده , , S.، نويسنده ,
Abstract :
Two independent techniques for modeling boron-based solid-state neutron detectors are presented—one using the GEANT4 Monte Carlo toolkit and the other one an analytical approach using a simplified physical model. Results of these techniques are compared for three different types of solid-state boron carbide detector. These results provide the basis for distinguishing between conversion layer and other solid-state detectors.
Keywords :
neutron detector , GEANT , Numerical Modeling , Semiconductor detector
