Title of article :
Pb quantification of CdZnTe microheterogeneities complimented by SEM, IR microscopy, EDX, and TOF-SIMS
Author/Authors :
Bliss، نويسنده , , Mary and Gerlach، نويسنده , , David C. and Cliff، نويسنده , , John B. and Toloczko، نويسنده , , Mychailo B. and Barnett، نويسنده , , Debra S. and Ciampi، نويسنده , , Guido and Jones، نويسنده , , Kelly A. and Lynn، نويسنده , , KELVIN G. LYNN، نويسنده ,
Pages :
3
From page :
138
To page :
140
Abstract :
High-resistivity crystals of CdZnTe are made using low-pressure Bridgman. The success of any doping scheme depends on its effectiveness in overcoming trace contamination and variations in processing. Multiple imaging and quantitative techniques gave highly complimentary information relating to spatial heterogeneity of the cadmium zinc telluride (CZT). Secondary Ion Mass Spectroscopy (SIMS) has good sensitivity and can quantitate trace elements in areas less than 150 μm in diameter. PNNL has SIMS standards for several key elements and can extrapolate for other elements. A heavily Pb-doped sample (0.1 atm%) was characterized to determine the distribution of lead and its potential impact on precipitates.
Journal title :
Astroparticle Physics
Record number :
2029468
Link To Document :
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