X-ray irradiation of silicon detectors

Silicon pad detectors were irradiated with a 30 kVp X-ray energy spectrum and the change in capacity and dark current was measured as a function of radiation dose and restoring time. After irradiation of the detectors the parameters were monitored and the time to get back to the baseline before irradiation was measured. The relaxation process of the detector functionality (the recovery of the characteristics) was observed with bias voltage applied to the detectors.