Development of a two-dimensional strip radiation sensor fabricated with normal silicon processes

A two-dimensional readout micro-strip sensor processed with single-sided silicon processes has been designed and fabricated. Both p+(X) and n+(Y) electrodes are placed on one side. The n+ electrode is surrounded with the p+ strips to make isolation of each n+ electrode. The test chip was fabricated at HPK. The detector properties have been measured and the basic idea of p+ and n+ structure on the sensor has been confirmed. However, a suppression of the breakdown is not sufficient to achieve deep depletion underneath the n+ electrode. This comes from a too thin isolation SiO2 layer between the p+ and n+ readout-strip at the crossing points.