Title of article
A ZnS–Si isotype heterojunction avalanche photodiode structure for scintillation light detection
Author/Authors
Tapan، نويسنده , , I. and Ahmetoglu (Afrailov)، نويسنده , , M.A. and Kocak، نويسنده , , F.، نويسنده ,
Pages
4
From page
268
To page
271
Abstract
We have developed a zinc sulfide–silicon (ZnS–Si) isotype heterojunction avalanche photodiode (APD) structure that has high quantum efficiency and low excess noise factor for photons of wavelength in the region from 340 to 800 nm. The dependence of quantum efficiency, mean signal and its fluctuation on incident photons wavelength are calculated in a well-defined device geometry by a Single Particle Monte Carlo simulation technique. Based on this work, we offer a new APD structure for scintillation light detection.
Keywords
Detector modelling , Scintillation light detection , Heterojunction detectors , Monte Carlo simulation
Journal title
Astroparticle Physics
Record number
2029759
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