Measurements and simulations of silicon semi 3D radiation detectors

New results on the semi three-dimensional (3D) silicon radiation pixel detectors are reported. In particular, improved capacitance, leakage current measurements and 3D simulations are considered. In addition, comparisons between the experimental data and simulations are performed. The results support the anticipated beneficial features of 3D detector structures like low depletion bias, low leakage currents combined with high breakdown voltage and fast collection speed at low bias voltages.