Author/Authors :
Ullلn، نويسنده , , M. and Dيez، نويسنده , , S. and Campabadal، نويسنده , , F. and Lozano، نويسنده , , M. and Pellegrini، نويسنده , , G. and Knoll، نويسنده , , D. and Heinemann، نويسنده , , B.، نويسنده ,
Abstract :
We studied the radiation hardness of different SiGe BiCMOS technologies in the search for a proper microelectronic technology to be used in the design of the Front-End chip for the readout of detectors of the Inner Detector of the ATLAS Upgrade for the future Super-LHC. Gamma and neutron irradiations were performed in order to account for ionization and displacement damage. The results show that all technologies are still functional after irradiation to the levels expected at the real experiment. Small differences were observed among technologies, therefore more statistics would be needed in order to make a selection of technology for the final design.
Keywords :
Radiation effects , Ionization damage , Displacement damage , Hardness assurance , SiGe , SiGe HBT
