Title of article
Scintillation characteristics on anthracene-doped naphthalene crystal for 137Cs-γ ray source
Author/Authors
Balamurugan، نويسنده , , N. and Arulchakkaravarthi، نويسنده , , A. and Ramasamy، نويسنده , , P.، نويسنده ,
Pages
5
From page
767
To page
771
Abstract
In this paper, we report scintillation characterizations on anthracene-doped naphthalene (NA) crystal. Crystals of this scintillator have been grown using the Bridgman-growth process. The peak of NA crystal emission is at 425 nm. The luminescence intensity of the NA crystal is 3 times that of pure naphthalene crystal. Naphthalene when doped with anthracene has high light output and fast principal decay constant (<30 ns). For 662 keV γ rays (137Cs source), energy resolution of 18% (FWHM) has been recorded at room temperature for NA crystals coupled to a photomultiplier. The pulse height of NA is 10 times greater than the pure naphthalene crystal. The NA detector exhibited a good timing performance compared to trans-stilbene detector.
Keywords
Bridgman technique , Aromatic organic materials , scintillation detector , X-ray diffraction
Journal title
Astroparticle Physics
Record number
2030263
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