Title of article
Spectroscopic silicon imaging detectors: Past achievements and new developments
Author/Authors
Lutz، نويسنده , , G. and Andritschke، نويسنده , , R. and Andricek، نويسنده , , David L. and Eckhardt، نويسنده , , R. and Englhauser، نويسنده , , J. G. Fuchs، نويسنده , , G. and Hنlker، نويسنده , , O. N. Hartmann، نويسنده , , R. and Heinzinger، نويسنده , , Antonios K. and Hermann، نويسنده , , S. and Holl، نويسنده , , Richard P. and Kimmel، نويسنده , , N. and Lechner، نويسنده , , P. and Meidinger، نويسنده , , N. and Porro، نويسنده , , M. and Richter، نويسنده , , R.H، نويسنده ,
Pages
8
From page
960
To page
967
Abstract
The need of high quality spectroscopic semiconductor imaging detectors in X-ray astronomy was the principal driving force in founding the MPI Semiconductor Laboratory. Detectors developed in this laboratory are based on new function principles and are processed in the silicon detector processing line established within the laboratory. We describe the development of pnCCDs as already used in the XMM-Newton European X-ray observatory and foreseen for eROSITA, the DEPFET based pixel detector for XEUS and a new development which makes it possible to measure charge with a precision below one elementary charge. A noise value of 0.25 electron r.m.s. has already been reached.
Keywords
Silicon detector , Imaging , DEPFET , RNDR , XEUS , Pixel detector , Spectroscopy , XMM
Journal title
Astroparticle Physics
Record number
2030475
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