Author/Authors :
Collazuol، نويسنده , , G. and Ambrosi، نويسنده , , G. and Boscardin، نويسنده , , M. and Corsi، نويسنده , , F. and Dalla Betta، نويسنده , , G.F. and Del Guerra، نويسنده , , A. and Dinu، نويسنده , , N. and Galimberti، نويسنده , , M. and Giulietti، نويسنده , , D. and Gizzi، نويسنده , , L.A. and Labate، نويسنده , , L. and Llosa، نويسنده , , G. and Marcatili، نويسنده , , S. and Morsani، نويسنده , , F. and Piemonte، نويسنده , , C. and Po، نويسنده ,
Abstract :
Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (Trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution.
Keywords :
Opto-semiconductor , Silicon PhotoMultiplier , High resolution timing , Single photon , Photon detection efficiency
