Title of article
R&D of a pixel sensor based on fully depleted SOI technology
Author/Authors
Tsuboyama، نويسنده , , Toru and Arai، نويسنده , , Yasuo and Fukuda، نويسنده , , Koichi and Hara، نويسنده , , Kazuhiko and Hayashi، نويسنده , , Hirokazu and Hazumi، نويسنده , , Masashi and Ida، نويسنده , , Jiro and Ikeda، نويسنده , , Hirokazu and Ikegami، نويسنده , , Yoichi and Ishino، نويسنده , , Hirokazu and Kawasaki، نويسنده , , Takeo and Kohriki، نويسنده , , Takashi and Komatsubara، نويسنده , , Hirotaka a، نويسنده ,
Pages
5
From page
861
To page
865
Abstract
Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.
Keywords
SOI CMOS technology , Monolithic pixel sensor
Journal title
Astroparticle Physics
Record number
2031294
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