Author/Authors :
Zoboli، نويسنده , , Andrea and Boscardin، نويسنده , , Maurizio and Bosisio، نويسنده , , Luciano and Dalla Betta، نويسنده , , Gianfranco and Piemonte، نويسنده , , Claudio and Pozza، نويسنده , , Alberto and Ronchin، نويسنده , , Sabina and Zorzi، نويسنده , , Nicola، نويسنده ,
Abstract :
In the past two years 3D silicon radiation detectors have been developed at ITC-irst (Trento, Italy). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper reports the electro-optical characterization of 3D test diodes made with this approach. Experimental results and TCAD simulations provide good insight into the charge collection mechanism and response speed limitation of these structures.
