Title of article
Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p–i–n structures
Author/Authors
Kostamo، نويسنده , , Pasi and Lankinen، نويسنده , , Aapo and Tuomi، نويسنده , , Turkka O. and Sنynنtjoki، نويسنده , , Antti and Lipsanen، نويسنده , , Harri and Zhilyaev، نويسنده , , Yuri V. Fedorov، نويسنده , , Leonid and Orlova، نويسنده , , Tatiana، نويسنده ,
Pages
4
From page
192
To page
195
Abstract
Results from synchrotron X-ray topography and electrical characterization of thick epitaxial GaAs p–i–n structures suitable for manufacturing of radiation detectors are reported. The structures under study have been grown with hydride vapor phase epitaxy method. A comprehensive set of large-area transmission, large-area back-reflection and transmission section topographs are analyzed. The X-ray topography results are compared with the dark current density of the detector diodes. The X-ray topographs show the defect structure in the samples and provide important information for epitaxial process optimization.
Keywords
Epitaxial GaAs , X-ray topography , p–i–n diode
Journal title
Astroparticle Physics
Record number
2032034
Link To Document