Author/Authors :
La Rosa، نويسنده , , A. and Marchetto، نويسنده , , F. and Pardo، نويسنده , , J. and Donetti، نويسنده , , M. and Attili، نويسنده , , A. and Bourhaleb، نويسنده , , F. and Cirio، نويسنده , , R. and Garella، نويسنده , , M.A. and Giordanengo، نويسنده , , S. and Givehchi، نويسنده , , N. and Iliescu، نويسنده , , S. and Mazza، نويسنده , , G. and Pecka، نويسنده , , A. and Peroni، نويسنده , , C. and Pittà، نويسنده , , G.، نويسنده ,
Abstract :
A 64-channel circuit Application Specific Integrated Circuit (ASIC) for charge measurement has been designed in CMOS 0.35 μm technology and characterized with electrical tests.
IC has been conceived to be used as a front-end for dosimetry and beam monitoring detector read-out. For that application, the circuitry is housed at a few centimeters from the irradiated area of the detectors and therefore radiation damages can affect the chip performances.
IC has been tested on an X-ray beam. In this paper, the results of the test and an estimate of the expected lifetime of the ASIC in a standard radio-therapeutical treatment environment are presented. An increase of the background current of 2 fA/Gy has been observed at low doses, whilst the gain changes by less than 3% when irradiated up to 15 kGy. Furthermore it has been assessed that, when used as an on-line beam monitor and the annealing effect has been taken into account, the background current increase is ∼440 fA/year.
Keywords :
radiotherapy , Hadrontherapy , Radiation damage , CMOS technology , VLSI electronics , dosimetry , Charge measurement circuit , Beam position monitor
