Author/Authors :
Du، نويسنده , , Sichao and Burgess، نويسنده , , Timothy and Gault، نويسنده , , Baptiste and Gao، نويسنده , , Qiang and Bao، نويسنده , , Peite and Li، نويسنده , , Li and Cui، نويسنده , , Xiangyuan and Kong Yeoh، نويسنده , , Wai and Liu، نويسنده , , Hongwei and Yao، نويسنده , , Lan and Ceguerra، نويسنده , , Anna V. and Hoe Tan، نويسنده , , Hark and Jagadish، نويسنده , , Chennupati and Ringer، نويسنده , , Simon P. and Zheng، نويسنده , , Rongkun، نويسنده ,
Abstract :
Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17 nm thanks to an advanced reconstruction method exploiting the specimenʹs crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio.
