Solid state reaction in sandwich-type Al/Cu thin films

Al/Cu/Al and Cu/Al/Cu triple layers with approximately 10 nm single layer thickness deposited on tungsten substrates were analyzed in the early stages of reactive interdiffusion by means of atom probe tomography. The first reaction product is found after 5 min thermal treatment at 110 ∘ C and identified by direct chemical analysis to be Al 2 Cu . Surprisingly, we found a significant asymmetry in the reaction rate of the new phase with the stacking sequence: the thickness of the product grown at the interfaces, at which Cu is deposited on top of the Al layer, is approximately 1.5–2 times thicker than the other one at the interfaces at which Al is deposited onto a Cu layer. On the other hand, at both interfaces the thickness of the product layer depends parabolically on time. No precursory interdiffusion and no distinct nucleation process of the product are observed.