Electron emission from nitrogen-doped chemical vapour deposited diamond

We have used urea ((NH2)2CO) as a dopant and grown N-doped polycrystalline diamond using hot filament chemical vapor deposition (HFCVD) technique, and in addition, the mold-based technique is used in order to obtain the pyramidal-shape array structure. Both polycrystalline films and pyramidal-shape array are identified as diamond from the results of Auger electron spectroscopy (AES) and Raman spectroscopy. The nitrogen concentrations of the film are evaluated using Rutherford backscattering (RBS) technique and it is found to be about 1020 cm−3. A turn-on field as low as 0.5 V/μm in the emission properties has been confirmed and the emission current fluctuations are discussed.