Title of article :
Holographic voltage profiling on 75 nm gate architecture CMOS devices
Author/Authors :
Thesen، نويسنده , , Alexander E. and G. Frost، نويسنده , , Bernhard and C. Joy، نويسنده , , David، نويسنده ,
Pages :
5
From page :
277
To page :
281
Abstract :
Voltage profiles of the source–drain region of a CMOS transistor with 75 nm gate architecture taken from an off-the-shelf Intel PIII processor are presented. The sample preparation using a dual beam system is discussed as well as details of the electron optical setup of the microscope. Special attention is given to the analysis of the reconstructed holograms.
Keywords :
CMOS devices , Dopant profiling , Electron holography
Journal title :
Astroparticle Physics
Record number :
2047611
Link To Document :
بازگشت