Title of article :
Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation
Author/Authors :
Mo، نويسنده , , Yufei and Zhao، نويسنده , , Wenjie and Huang، نويسنده , , Deming and Zhao، نويسنده , , Yang-Fei and Bai، نويسنده , , Mingwu، نويسنده ,
Pages :
6
From page :
247
To page :
252
Abstract :
Nano-sized textures resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication and nanotribological properties of nanotexture by local anodic oxidation (LAO) on H-passivated Si surface are presented. A special attention is paid to find the relation between the size of oxide nanotexture and operational parameters such as tip-sample pulsed bias voltage, pulsewidth, and relative humidity to fabricate oxide nanotexture. The nanotribological properties were investigated by a colloidal probe. The results indicate that the nanotextures exhibited low adhesion and greatly reduced friction force at nanometer scale.
Keywords :
Local anodic oxidation , atomic force microscopy , Nanotribology , Nanotexture
Journal title :
Astroparticle Physics
Record number :
2049365
Link To Document :
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