Xenon ion induced atomic transport through aluminum-nitride interfaces

Low-temperature Xe ion mixing of CrxN (x = 1, 2) and TiN films on Al and vice versa was studied up to fluences of 2 × 1016 Xe cm−2. Analysis via Rutherford backscattering spectrometry at 0.9 MeV and 2.4 MeV α-energy and resonance nuclear reaction analysis provided the concentration profiles of all elements at the interface. All three elements located at the interface were found to be mixed at approximately the same rate and the athermal mixing process was mainly ballistic. Xe segregation at the interface was also observed.