Title of article :
The effect of electron range on electron beam induced current collection and a simple method to extract an electron range for any generation function
Author/Authors :
Lahreche، نويسنده , , A. and Beggah، نويسنده , , Y. and Corkish، نويسنده , , R.، نويسنده ,
Pages :
9
From page :
1343
To page :
1351
Abstract :
The effect of electron range on electron beam induced current (EBIC) is demonstrated and the problem of the choice of the optimal electron ranges to use with simple uniform and point generation function models is resolved by proposing a method to extract an electron range–energy relationship (ERER). The results show that the use of these extracted electron ranges remove the previous disagreement between the EBIC curves computed with simple forms of generation model and those based on a more realistic generation model. The impact of these extracted electron ranges on the extraction of diffusion length, surface recombination velocity and EBIC contrast of defects is discussed. It is also demonstrated that, for the case of uniform generation, the computed EBIC current is independent of the assumed shape of the generation volume.
Keywords :
Charge injection , EBIC , Electron-beam applications , Generation function , Electron penetration , Semiconductor materials measurements
Journal title :
Astroparticle Physics
Record number :
2050873
Link To Document :
بازگشت