Title of article :
In situ formation and high-temperature reinforcing effect of MoSi2 and WSi2 on reaction-bonded Si3N4
Author/Authors :
Zhang، نويسنده , , B.R. and Marino، نويسنده , , F. and Sglavo، نويسنده , , V.M. and Gialanella، نويسنده , , S.، نويسنده ,
Abstract :
A three-step procedure consisting of presintering, reaction-bonding and post-hot-pressing was employed to prepare Si3N4/MoSi2 and Si3N4/WSi2 composites, using as starting materials powder mixtures of Si–Mo and Si–W, respectively. A presintering step in an Ar-base atmosphere was performed for the in situ formation of intermetallic compounds—MoSi2 and WSi2; the nitridation in an N2-base atmosphere with a total cycle of 1350°C×20 h+1400°C×20 h+1450°C×2 h in order to realize the complete conversion of Si into Si3N4; post-hot-pressing was employed for the further densification of the reaction-bonded specimens. The 3- and 4-point bend tests were performed at 25, 1000, 1200 and 1400°C. Si3N4/MoSi2 composite shows a maximum value of bend strength at about 1200°C, whereas the bend strength of Si3N4/WSi2 composite slightly increases from room temperature up to 1000°C.
Keywords :
Molybdenum disilicide , Tungsten disilicide , High-temperature strength , Silicon nitride
Journal title :
Astroparticle Physics