Title of article
Ion beam modification of ceramics
Author/Authors
McHargue، نويسنده , , Carl J.، نويسنده ,
Pages
12
From page
94
To page
105
Abstract
Ion-solid interactions that occur during ion bombardment of solids are nonequilibrium in nature; however, the response of a specific material may be governed by thermochemical and thermodynamic factors. Defects are created during irradiation by the elastic and inelastic collisions of the bombarding ions with the target atoms (ions). The types of defects that exist after the cascade cool-down period may be determined by chemical factors. In many cases, the introduction of a defect or an impurity ion must be done in a manner that maintains electrical neutrality; consequently, charged point defects or impurity-point defect complexes are often produced. This paper reviews the structural features of implanted ceramics using sapphire (single crystal α-Al2O3) as an example of a ceramic with largely ionic bonding and silicon carbide (6H α-SiC) as one with covalent bonding.
Keywords
SiC , Defect structures , Ion implantation , Sapphire
Journal title
Astroparticle Physics
Record number
2053936
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