Author/Authors :
Yamada، نويسنده , , I and Matsuo، نويسنده , , J and Toyoda، نويسنده , , N and Aoki، نويسنده , , T and Jones، نويسنده , , E and Insepov، نويسنده , , Z، نويسنده ,
Abstract :
The unique characteristics of gas cluster ion beam processing are reviewed. Cluster ion beams consisting of hundreds to thousands of atoms have been generated from various kinds of gas materials. Multiple collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally non-linear bombarding processes. These bombarding characteristics can be applied to shallow ion implantation, high yield sputtering and smoothing, surface cleaning and low temperature thin film formation.
Keywords :
Shallow ion implantation , sputtering , Surface smoothing , Cluster ion-assisted thin film deposition , Cluster ion beam
