Effect of ion mixing by C+ implantation on friction and adhesion of amorphous carbon film on SiO2

Amorphous carbon films on the SiO2 substrates have been implanted with C ions with energy of 110 KeV and fluences ranging from 1×1016 to 1×1017 C cm−2. The effect of ion mixing on the friction behavior of amorphous carbon film and changes in chemical composition and structure were investigated. The results show that the anti-wear life and adhesion of amorphous carbon films on SiO2 substrate were significantly increased by C ions implantation, especially when the fluence reached 1×1017 C cm−2. The Si–C chemical bonding across the interface plays the key role in the increase of adhesion strength and the anti-wear life of amorphous carbon film. The friction and wear mechanism of the amorphous carbon film under dry friction was also discussed.