Title of article
Characterization of R-curve behavior in Si3N4-based ceramics
Author/Authors
Gong، نويسنده , , Jianghong and Guan، نويسنده , , Zhenduo، نويسنده ,
Pages
8
From page
42
To page
49
Abstract
The exponential function proposed by Ramachandran and Shetty (J. Am. Ceram. Soc., 74 (1991) 2634–2641) was employed to describe the R-curves measured by directly observing the stable growth of annealed indentation cracks in the tensile surface of the specimen during bending test of four grades of Si3N4-based ceramics. It was shown that this exponential function gives a satisfactory description for the experimental data measured from each individual crack. A detailed explanation for the physical meanings of the adjustable parameters included in this function was then presented. Some useful parameters, including the critical crack resistance, the threshold crack resistance and the flaw tolerance, were also deduced based on the analysis of the experimental data.
Keywords
Crack-resistance , Mircostructure , Indentation , Silicon nitride
Journal title
Astroparticle Physics
Record number
2059322
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