Author/Authors :
Li، نويسنده , , Z.C. and Liu، نويسنده , , L and Wu، نويسنده , , X and He، نويسنده , , L.L. and Xu، نويسنده , , Y.B، نويسنده ,
Abstract :
Vickers indentations were carried out on the surface of GaAs single crystal with the load of 0.049 N and were observed using high-resolution electron microscopy in the present experiment. The experimental results reveal that many defects such as dislocation, microtwin and stacking-fault occurred and amorphization took place beneath the indentation. High-pressure induced amorphization and shear deformation induced amorphization were proposed for the transformation from crystalline to amorphous structure.
