Author/Authors :
Lu، نويسنده , , Da-chen and Wang، نويسنده , , Du and Wang، نويسنده , , Xiaohui and Liu، نويسنده , , Xianglin and Dong، نويسنده , , Jianrong and Gao، نويسنده , , Weibin and Li، نويسنده , , Chengji and Li، نويسنده , , Yunyan، نويسنده ,
Abstract :
Single-crystal GaN films have been deposited on (0112) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration of undoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.
Keywords :
Gallium nitride , MOCVD , chemical vapor deposition , Epitaxy of thin films
