Author/Authors :
Baur، نويسنده , , J. and Kunzer، نويسنده , , M. and Maier، نويسنده , , K. and Kaufmann، نويسنده , , U. and Schneider، نويسنده , , J.، نويسنده ,
Abstract :
The 1.3 eV iron related emission bands in GaN and A1N were analysed by photoluminescence and photoluminescence excitation spectroscopy. The (−0) acceptor levels of iron in GaN and A1N were determined. A value of 0.5 eV for the GaN/A1N valence band discontinuity is deduced. Values for the GaAs/GaN and the GaAs/A1N valence band discontinuities are discussed.
Keywords :
Heterostructures , nitrides , Semiconductors , IR spectroscopy
