Title of article
Investigations on PdIn-based high temperature stable ohmic contacts on GaAs by X-ray reflectometry and diffractometry
Author/Authors
Pirling، نويسنده , , T. and Fricke، نويسنده , , K. and Schü?ler، نويسنده , , M. and Lee، نويسنده , , W.Y. and Fue?، نويسنده , , A. Sigurdardo´ttir and H. L. Hartnagel ، نويسنده , , H.L.، نويسنده ,
Pages
4
From page
70
To page
73
Abstract
X-ray investigations of a high temperature stable contact system based on Pd/In/Pd/W are presented. The contact system for n- and p-type GaAs is designed for long-term stability on GaAs at ambient temperatures up to 400 °C.
Keywords
Ohmic contact , Gallium arsenide , X-ray diffraction , Indium palladium
Journal title
Astroparticle Physics
Record number
2063072
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