Title of article :
Growth of bulk SiC
Author/Authors :
Tairov، E. A. نويسنده , , Yu.M.، نويسنده ,
Abstract :
The problems of growing SiC ingots with LETI methods are considered in this paper. The analysis of factors influenced by conditions of different polytype modification crystals growing is conducted. Comparative characteristics of growing processes of crystals with the LETI method and the Lely method are obtained.
Keywords :
Lely method , LETI method , silicon carbide , Single-crystal growth
Journal title :
Astroparticle Physics
