Author/Authors :
Dmowski، نويسنده , , K. and Lepley، نويسنده , , B. and Losson، نويسنده , , E. and Bath، نويسنده , , A.، نويسنده ,
Abstract :
An analysis utilizing the low and high temperature side data of deep level transient spectra for the DLS-82E lock-in spectrometer is described. A bulk center in metal-insulator-InP structure has been examined by the DLS-82E spectrometer to demonstrate the practical application of the proposed procedure. The analyses utilizing both the peak and side data of deep level transient spectroscopy spectra were carried out and the obtained results were discussed.
