Title of article :
Theoretical investigation of the pressure dependences of energy gaps in InAs and InSb
Author/Authors :
Bouarissa، نويسنده , , N. and Aourag، نويسنده , , H.، نويسنده ,
Pages :
11
From page :
122
To page :
132
Abstract :
The observed dependences on pressure of the energy gaps in InAs and InSh at symmetry points in the Brillouin zone are successfully calculated using an empirical method based on the pseudopotential method. The negative pressure derivatives of the gaps at the X points of the conduction band relative to the valence band maxima are due to the d states.
Keywords :
Semiconductors , Electron states , Bond structure calculations , Phase transitions
Journal title :
Astroparticle Physics
Record number :
2063357
Link To Document :
بازگشت