• Title of article

    Theoretical investigation of the pressure dependences of energy gaps in InAs and InSb

  • Author/Authors

    Bouarissa، نويسنده , , N. and Aourag، نويسنده , , H.، نويسنده ,

  • Pages
    11
  • From page
    122
  • To page
    132
  • Abstract
    The observed dependences on pressure of the energy gaps in InAs and InSh at symmetry points in the Brillouin zone are successfully calculated using an empirical method based on the pseudopotential method. The negative pressure derivatives of the gaps at the X points of the conduction band relative to the valence band maxima are due to the d states.
  • Keywords
    Semiconductors , Electron states , Bond structure calculations , Phase transitions
  • Journal title
    Astroparticle Physics
  • Record number

    2063357