Investigations on hardness of rf sputter deposited SiCN thin films

Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties of the SiCN films. Surface morphology of the films was characterized by using Atomic Force Microscope. X-ray Photoelectron Spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering.