Author/Authors :
Chen، نويسنده , , Y.H. and Woodhead، نويسنده , , J. and David، نويسنده , , J.P.R. and Button، نويسنده , , C.C. and Hopkinson، نويسنده , , M. and Roberts، نويسنده , , J.S. and Sale، نويسنده , , T.E. and Robson، نويسنده , , P.N.، نويسنده ,
Abstract :
The room temperature operation of visible vertical cavity surface emitting lasers at 642 nm is reported. A pulsed threshold current of 45 mA for a 26 μm diameter mesa device (corresponding to 8.5 kA cm−2) was achieved at an operating voltage of 3.5 V. Photoluminescence at 10 K showed that an In0.48Al0.3Ga0.22P direct barrier provides better electron confinement than an In0.48Al0.52P indirect barrier with unstrained In0.48Ga0.52P quantum wells.
Keywords :
Visible lasers , VCSELs , Gallium indium phosphide , Photoluminescence
