High power aluminium-free InGaAsP/GaAs pumping diode lasers

We have developed low pressure metal-organic chemical vapour deposition technology for the growth of aluminium-free InGaAsP compounds lattice-matched to GaAs substrate. High power laser diodes based on these materials and emitting at 808 nm and 890 nm wavelengths have been fabricated and optimized. A threshold current density of 240 A cm−2, differential efficiency of 1.3 W A−1, characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-continuous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetime in excess of 100 years) and they are suitable for a broad range of pumping applications.